Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 14 (8) , 1052-1054
- https://doi.org/10.1109/lpt.2002.1021966
Abstract
The temperature sensitivity of metal-organic chemical vapor deposition (MOCVD)-grown highly strained (/spl Delta//spl alpha///spl alpha//spl sim/2.7%) In/sub 0.4/Ga/sub 0.6/Asand In/sub 0.4/Ga/sub 0.6/As/sub 0.995/N/sub 0.005/ quantum-well (QW) active lasers, with lasing wavelength of 1.185 and 1.295 /spl mu/m, respectively, is analyzed in terms of measured fundamental device parameters. From our analysis, the lower To values for the InGaAsN QW lasers can be explained in terms of the temperature dependence of the current injection efficiency, presumably due to increased carrier leakage in the InGaAsN QW lasers.Keywords
This publication has 13 references indexed in Scilit:
- Temperature analysis and characteristics of highly strained InGaAs-GaAsP-GaAs (λ < 1.17 μm) quantum-well lasersIEEE Journal of Quantum Electronics, 2002
- Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasersIEEE Photonics Technology Letters, 2002
- Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 2001
- Insights into carrier recombination processes in1.3 µm GaInNAs-based semiconductor lasers attained using high pressureElectronics Letters, 2001
- Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 2000
- Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasersIEEE Photonics Technology Letters, 2000
- 1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor depositionIEEE Photonics Technology Letters, 1999
- Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µmElectronics Letters, 1999
- GaInNAs: a novel material for long-wavelength semiconductor lasersIEEE Journal of Selected Topics in Quantum Electronics, 1997
- Analysis of T0 in 1.3 μm multi-quantum-well and bulk active lasersApplied Physics Letters, 1995