1.32-μm GaInNAs-GaAs laser with a low threshold current density
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 14 (3) , 275-277
- https://doi.org/10.1109/68.986784
Abstract
In this letter, we report on a recent development of diluted nitride laser diodes operating at the wavelengths around 1.3 /spl mu/m. The lasers grown by molecular beam epitaxy and processed into 20-/spl mu/m-wide ridge waveguide structures, mounted episides up on subcarriers, exhibit a threshold current density as low as 563 A/cm/sup 2/, slope efficiency of 0.2 W/A per facet, light power up to 40-mW continuous-wave, and characteristic temperature of 97-133 K.Keywords
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