Temperature dependence of lasing wavelength in a GaInNAs laser diode
- 1 July 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (7) , 777-779
- https://doi.org/10.1109/68.853497
Abstract
The temperature dependence of lasing wavelength in 1.2-μm or 1.3-μm-range GaInNAs edge-emitting laser diodes (LD) was found to be small. It is almost independent of the characteristic temperature (T 0 ) and is equivalent to the temperature shift of the bandgap wavelength of GaInNAs (0.42 nm//spl deg/C). Since the dependence is smaller than that of 1.3-μm-range conventional InGaAsP LD's and also smaller than the required value (0 . The small dependence is due to the small effect of band filling on lasing wavelength from the deep quantum well in GaInNAs LD's.Keywords
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