Effect of total pressure on the uniformity of epitaxial GaAs films grown in the Ga-HCl-AsH3-H2 system
- 1 November 1985
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 14 (6) , 645-653
- https://doi.org/10.1007/bf02654302
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Modeling of Sulfur Incorporation during Low Pressure CVD of GaAs (100) in the Ga ‐ HCl ‐ AsH3 ‐ H 2 ‐ H 2 S SystemJournal of the Electrochemical Society, 1984
- Modelling of gaas growth in the low pressure halide transport systemJournal of Electronic Materials, 1983
- Low Pressure Vapor Phase Epitaxy of GaAs in a Halogen Transport SystemJournal of the Electrochemical Society, 1981
- Sulfur incorporation and thickness variation in vapor-phase-epitaxial GaAs layers for FET’sApplied Physics Letters, 1979