Modelling of gaas growth in the low pressure halide transport system
- 1 March 1983
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 12 (2) , 235-246
- https://doi.org/10.1007/bf02651131
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Modeling of chemical vapor deposition: I. General considerationsJournal of Crystal Growth, 1982
- Experimental and theoretical study of low pressure GaAs VPE in the chloride systemJournal of Crystal Growth, 1982
- Low Pressure Vapor Phase Epitaxy of GaAs in a Halogen Transport SystemJournal of the Electrochemical Society, 1981
- Epitaxial GaAs Kinetic Studies: {001} OrientationJournal of the Electrochemical Society, 1970
- Reaction Equilibria in the Growth of GaAs and GaP by the Chloride Transport ProcessJournal of the Electrochemical Society, 1970
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- Preparation of GaAs[sub x]P[sub 1−x] by Vapor Phase ReactionJournal of the Electrochemical Society, 1964