Integration of Low Dielectric Constant Materials in Advanced Aluminum and Copper Interconnects
- 1 January 1999
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- A novel sub-half micron Al-Cu via plug interconnect using low dielectric constant material as inter-level dielectricIEEE Electron Device Letters, 1997
- On Advanced Interconnect Using Low Dielectric Constant Materials as Inter-Level DielectricsMRS Proceedings, 1996
- 0.1μm Interconnect Technology Challenges and the Sia RoadmapMRS Proceedings, 1996
- Dry Etching Technique for Subquarter‐Micron Copper InterconnectsJournal of the Electrochemical Society, 1995
- Filling dual damascene interconnect structures with AlCu and Cu using ionized magnetron depositionJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Methods And Needs For Low K Material ResearchMRS Proceedings, 1995
- Al planarization processes for multilayer metallization of quarter micrometer devicesThin Solid Films, 1994
- Copper Metallization Technology for Deep Submicron ULSIsMRS Bulletin, 1994