Optical properties of disordered GaAs/(Al,Ga)As distributed Bragg reflectors
- 15 June 1994
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 75 (12) , 7666-7668
- https://doi.org/10.1063/1.356597
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Interdiffusion in InGaAs/GaAs quantum well structures as a function of depthJournal of Applied Physics, 1993
- Analytic expressions for the reflection delay, penetration depth, and absorptance of quarter-wave dielectric mirrorsIEEE Journal of Quantum Electronics, 1992
- Layer intermixing and related long-term instability in heavily carbon-doped AlGaAs/GaAs superlatticesJournal of Electronic Materials, 1991
- Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterizationIEEE Journal of Quantum Electronics, 1991
- Post Growth Fabrication of GaAs/AlGaAs Reflection Modulators via Impurity Free DisorderingJapanese Journal of Applied Physics, 1991
- Submilliamp threshold vertical-cavity laser diodesApplied Physics Letters, 1990
- Very low voltage, normally-off asymmetric Fabry–Perot reflection modulatorElectronics Letters, 1990
- Normally-off high-contrast asymmetric Fabry–Perot reflection modulator using Wannier–Stark localization in a superlatticeApplied Physics Letters, 1990
- Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructuresJournal of Applied Physics, 1988
- Refractive index of Ga1−xAlxAsSolid State Communications, 1974