The generation of point defects in GaAs by electron-hole recombination at dislocations
- 1 November 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (11-12) , 1413-1417
- https://doi.org/10.1016/0038-1101(78)90217-4
Abstract
No abstract availableKeywords
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