Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique
- 1 October 1996
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (7) , 4226-4228
- https://doi.org/10.1063/1.363302
Abstract
Gallium nitride (GaN) thin films with a wurtzite structure were grown on fused silica (FS) substrates by pulsed laser ablation of a liquid gallium target in the presence of ammonia gas. X‐ray diffraction measurement shows a single c‐axis orientation for the GaN film grown with a thin (<1000 Å) zinc oxide (ZnO) film as an alignment layer. There is a great improvement in the surface morphology as well as optical transmission for the GaN film grown on the ZnO buffered FS substrate. The energy band gap obtained from the absorption spectrum is about 3.45 eV.This publication has 13 references indexed in Scilit:
- Preparation of crystalline beta barium borate (β-BaB2O4) thin films by opposed-targets magnetron sputteringJournal of Vacuum Science & Technology A, 1996
- Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting DiodesJapanese Journal of Applied Physics, 1995
- Dynamic Characteristics of Inverter Circuits Using Single Electron TransistorsJapanese Journal of Applied Physics, 1995
- Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layerApplied Physics Letters, 1992
- Current status of GaN and related compounds as wide-gap semiconductorsJournal of Crystal Growth, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Wide-gap semiconductor InGaN and InGaAln grown by MOVPEJournal of Electronic Materials, 1992
- Optical band gap of indium nitrideJournal of Applied Physics, 1986
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969
- Infrared Absorption Spectrum of GermaniumPhysical Review B, 1954