PHOTOELECTRONIC PROPERTIES OF ION-IMPLANTED CdS
- 1 June 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (11) , 467-469
- https://doi.org/10.1063/1.1653069
Abstract
The photoelectronic properties of CdS successively implanted with 1.0‐, 0.5‐, and 0.3‐MeV P+ ions versus annealing cycles were studied. Diodes thus formed were highly photosensitive, with photoconductive gains between 102 and 104. Yellow electroluminescence was observed at 77°K. Short annealing creates centers with a sheet resistance thermal activation energy of 0.13 eV. Prolonged annealing creates states 0.75–0.8 eV below the band edge.Keywords
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