Controlled crystallization of LPCVD amorphous silicon
- 1 January 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 272 (1) , 93-98
- https://doi.org/10.1016/0040-6090(95)06979-8
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- A study of the morphology and microstructure of LPCVD polysiliconJournal of Materials Science, 1993
- Optical Properties of Amorphous Si Partially Crystallized by Thermal AnnealingJapanese Journal of Applied Physics, 1993
- Ellipsometric determination of the thickness and refractive index of silicon filmsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Optimization of the polycrystalline silicon-on-silicon dioxide characterization using spectroscopic ellipsometryThin Solid Films, 1993
- On the electrical conduction in the interpolysilicon dielectric layersIEEE Electron Device Letters, 1993
- Crystallization of amorphous thin low pressure chemical vapour deposition silicon films: in situ TEM measurement of grain growth ratesJournal of Materials Science Letters, 1993
- Growth and Physical Properties of LPCVD Polycrystalline Silicon FilmsJournal of the Electrochemical Society, 1984
- Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eVPhysical Review B, 1984
- Optical properties of low-pressure chemically vapor deposited silicon over the energy range 3.0–6.0 eVApplied Physics Letters, 1981
- Spectroscopic Analysis of the Interface Between Si and Its Thermally Grown OxideJournal of the Electrochemical Society, 1980