Noise and electrical characterisation of e-beam rapid isothermally annealed n-channel MOSFETS
- 1 May 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (5) , 393-398
- https://doi.org/10.1088/0268-1242/4/5/011
Abstract
The low-frequency noise of rapid thermally annealed (RTA) n-channel MOSFETS has been studied and compared with furnace annealed devices. The RTA devices exhibited higher noise (up to an order of magnitude in En). The increase in interface (1/f) noise was thought to be related to the fast cooling rates, associated with RTA. Further, a significant contribution of G-R noise, due to bulk defects, was found for short RTA cycles. Measurements on RTA samples have also shown a deterioration of device performance, with respect to channel interface state density and threshold voltage.Keywords
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