Current-dependent silicon oxide growth during scannedprobe lithography
- 18 July 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (15) , 1411-1412
- https://doi.org/10.1049/el:19960882
Abstract
Measurement of picoAmp currents during silicon oxide growth by scanning probe lithography is reported. The observed current is attributed to the reduction of H+ ions produced by the oxidation process. The local electrical quality of the nanofabricated oxide lines, probed by local Fowler-Nordheim tunnelling, is found to be uniform and highly insulating.Keywords
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