Damage-induced high-resistivity regions in Al0.48In0.52As
- 23 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (17) , 1786-1788
- https://doi.org/10.1063/1.102173
Abstract
The sheet resistivity of oxygen‐implanted n+‐Al0.48In0.52As grown on InP was measured as a function of oxygen ion dose and post‐implant annealing temperature. The sheet resistivity is >105 Ω/⧠ after implantation for doses in the range 1012–8×1013 cm−2, and increases to >107 Ω/⧠ after annealing at 500 °C. Temperature‐dependent Hall measurements show that the resistivity of this compensated AlInAs has a thermal activation energy of 0.68 eV. Above 600 °C the damage‐related compensation is removed and the material is returned to its original resistivity. We find no thermally stable, oxygen‐related deep acceptors in AlInAs, in contrast to the results for AlGaAs.Keywords
This publication has 15 references indexed in Scilit:
- Near-ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxyApplied Physics Letters, 1989
- Implant Isolation of GaAsJournal of the Electrochemical Society, 1988
- Electrical and structural characterization of highly perfect semi-insulating InAlAs grown by molecular beam epitaxyJournal of Crystal Growth, 1988
- Formation of thermally stable high-resistivity AlGaAs by oxygen implantationApplied Physics Letters, 1988
- GaAlInAs ternary and quaternary alloys lattice matched to InP for electronic, optoelectronic and optical device applications, by LP-MOVPEJournal of Crystal Growth, 1988
- The relation of dominant deep levels in MOCVD AlxGa1−xAs with growth conditionsJournal of Crystal Growth, 1984
- The growth and characterization of nominally undoped Al1−xInxAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1984
- Electrical properties of undoped and Si-doped Al0.48In0.52As grown by liquid phase epitaxyApplied Physics Letters, 1983
- GaInAs-AlInAs structures grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPEApplied Physics Letters, 1979