Nonequilibrium point defects and dopant diffusion in carbon-rich silicon
- 30 July 2001
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 64 (7) , 073202
- https://doi.org/10.1103/physrevb.64.073202
Abstract
We show that B and P exhibit suppressed and As and Sb enhanced diffusion in Si with C atom concentrations of about Since B and P diffuse via an interstitial mechanism and Sb and As diffuse via a vacancy mechanism, this indicates a suppressed density of self-interstitials and an enhanced density of vacancies in C-doped Si. Simultaneous measurements of vacancy supersaturation by means of Sb diffusion and of the clustering kinetics of C are used to study the annihilation of excess vacancies at the Si surface. The surface acts as an effective sink for vacancies with a recombination length λ⩽70 nm.
Keywords
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