Optically pumped laser action at 77 K in GaAs/GaInP double heterostructures grown by molecular beam epitaxy
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1) , 30-32
- https://doi.org/10.1063/1.91690
Abstract
Cw laser action has been achieved at 77 K in double heterostructures of GaAs/Ga0.47In0.53P grown by molecular beam epitaxy using the dimers P2 and As2. The 6471‐Å line of a krypton laser was used to optically pump 100‐μm‐wide bars of the p isotype structure having an active region thickness of 0.25 μm. Laser action was initiated, as witnessed by the appearance of Fabry Perot modes in the emission and the occurence of a sharp knee in the emitted‐power–pump‐power characteristic, at an absorbed power density of 103 W/cm2.Keywords
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