Effects of Introducing H2 Into Irradiated Mosfet’s from Room Temperature to 250°C
- 1 January 1993
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Post-irradiation behavior of the interface state density and the trapped positive chargeIEEE Transactions on Nuclear Science, 1990
- Interface trap formation via the two-stage H/sup +/ processIEEE Transactions on Nuclear Science, 1989
- The effect of hydrogen on hot carrier radiation immunity of MOS devicesApplied Surface Science, 1989
- Trap creation in silicon dioxide produced by hot electronsJournal of Applied Physics, 1989
- Elimination and Generation of Si ‐ SiO2 Interface Traps by Low Temperature Hydrogen AnnealingJournal of the Electrochemical Society, 1988
- Total dose radiation hardness of MOS devices in hermetic ceramic packagesIEEE Transactions on Nuclear Science, 1988
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- The Effects of Processing on Hot Electron Trapping in SiO2Journal of the Electrochemical Society, 1976
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971
- Expedient method of obtaining interface state properties from MIS conductance measurementsSolid-State Electronics, 1969