A new chemical etch for defects studies in very thin film (< 1000 Å) SIMOX material
- 30 September 1993
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 35 (2) , 129-133
- https://doi.org/10.1016/0254-0584(93)90187-q
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Delineation of defects in SIMOX structures using a chemical etching techniqueVacuum, 1992
- MEMC Etch—A Chromium Trioxide‐Free Etchant for Delineating Dislocations and Slip in SiliconJournal of the Electrochemical Society, 1990
- An Etch for Delineation of Defects in SiliconJournal of the Electrochemical Society, 1984
- A New Preferential Etch for Defects in Silicon CrystalsJournal of the Electrochemical Society, 1977
- Dislocation EtchingsThe Journal of Chemical Physics, 1960
- Nucleation on dislocationsActa Metallurgica, 1957
- Copper Precipitation on Dislocations in SiliconJournal of Applied Physics, 1956