Change in stoichiometry of thin films of palladium chloride during ion beam analysis
- 1 March 1978
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 149 (1) , 743-747
- https://doi.org/10.1016/0029-554x(78)90962-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Recoil implantation of materialsJournal of Materials Science, 1977
- 1.13 Plating with ion acceleratorsVacuum, 1977
- In situ spectrochemical analysis of solid surfaces by ion beam sputteringAnalytical Chemistry, 1977
- Sputtering of potassium chloride by H, He, and Ar ionsNuclear Instruments and Methods, 1976
- The optimization of a rutherford backscattering geometry for enhanced depth resolutionNuclear Instruments and Methods, 1975
- Hyperthermal beams sputtered from alkalihalide surfacesRadiation Effects, 1974
- Gettering rates of various fast-diffusing metal impurities at ion-damaged layers on siliconApplied Physics Letters, 1972
- Transmission sputtering and recoil implantation from thin metal films under ion bombardmentNuclear Instruments and Methods, 1972