Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 93 (1-4) , 342-346
- https://doi.org/10.1016/0022-0248(88)90550-7
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 11 references indexed in Scilit:
- GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxyApplied Physics Letters, 1987
- GaAs Atomic Layer Epitaxy by Hydride VPEJapanese Journal of Applied Physics, 1986
- Growth of a (GaAs)n/(InAs)n Superlattice Semiconductor by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Molecular Layer EpitaxyJournal of the Electrochemical Society, 1985
- Growth of a novel InAs-GaAs strained layer superlattice on InPApplied Physics Letters, 1985
- Planar doping by interrupted MOVPE growth of GaAsJournal of Crystal Growth, 1984
- (InAs)1(GaAs)1 Layered Crystal Grown by MOCVDJapanese Journal of Applied Physics, 1984
- A New High-Electron Mobility Monolayer SuperlatticeJapanese Journal of Applied Physics, 1983
- THE PYROLYSIS OF TRIMETHYLINDIUMCanadian Journal of Chemistry, 1964
- The Decomposition of ArsineThe Journal of Physical Chemistry, 1955