Correlation between Processing, Composition, and Mechanical Properties of PECVD-SiN, Thin Films
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Void formation mechanism in VLSI aluminum metallizationIEEE Transactions on Electron Devices, 1989
- Correlation of G/sub m/ degradation of submicrometer MOSFETs with refractive index and mechanical stress of encapsulation materialsIEEE Transactions on Electron Devices, 1989
- Fluorinated chemistry for high-quality, low hydrogen plasma-deposited silicon nitride filmsJournal of Applied Physics, 1987
- Invited Paper Novel Chemistry For High Quality, Low Hydrogen PECVD Silicon Nitride FilmsPublished by SPIE-Intl Soc Optical Eng ,1987
- Mechanisms of Plasma‐Enhanced Silicon Nitride Deposition Using SiH4 / N 2 MixtureJournal of the Electrochemical Society, 1981
- The hydrogen content of plasma-deposited silicon nitrideJournal of Applied Physics, 1978
- Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substratesJournal of Applied Physics, 1978
- Reactive Plasma Deposited Si-N Films for MOS-LSI PassivationJournal of the Electrochemical Society, 1978
- Lorentz-Lorenz correlation for reactively plasma deposited Si-N filmsApplied Physics Letters, 1978
- Thermal Cycling and Surface Reconstruction in Aluminum Thin FilmsJournal of the Electrochemical Society, 1969