Electronic mobility gap structure and the nature of deep defects in amorphous silicon-germanium alloys grown by photo-CVD
- 1 December 1993
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 164-166, 23-26
- https://doi.org/10.1016/0022-3093(93)90483-e
Abstract
No abstract availableKeywords
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