Transition from two to three dimensions in homoepitaxial thin-film growth: The effect of a repulsive barrier at descending steps

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Abstract
Through Monte Carlo simulation we have studied the effect of a repulsive barrier at descending steps in the evolution of the island perimeter during epitaxial film growth. We found that the effect of including such a barrier, together with a restriction to the columnar growth, is the extinction of the perimeter oscillation during the film growth at an intermediate temperature, with an oscillating regime for lower and higher temperatures.