Oxidation kinetics of laser formed MoSi2 on polycrystalline silicon
- 1 May 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5) , 2711-2715
- https://doi.org/10.1063/1.332296
Abstract
Thin films of laser formed MoSi2 on polycrystalline silicon were oxidized in either dry or wet O2. These films were oxidized in dry O2 at temperatures of 808–1104 °C for times that ranged from 0.5–42 h, and in wet O2 at 800° to 1000 °C for 0.5–2 h. For both oxidation conditions, the growth of SiO2 on the silicide surface is parabolic with time. Activation energies for the dry and wet processes have been measured to be 1.6 and 1.3 eV, respectively. As the oxidation proceeds and the underlying silicon decreases in thickness, the phase remains as MoSi2. However, upon complete consumption of the underlying silicon, the MoSi2 phase transforms to Mo3Si.This publication has 10 references indexed in Scilit:
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