Physics and Chemistry of Impurity Diffusion and Oxidation of Silicon
- 1 January 1981
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 159 references indexed in Scilit:
- Distribution of dopant in SiO2-SiJournal of Applied Physics, 1976
- Temperature dependence of boron diffusion in (111), (110) and (100) siliconSolid-State Electronics, 1976
- On phosphorus diffusion in silicon under oxidizing atmospheresSolid-State Electronics, 1973
- Nucleation and growth of stacking faults in epitaxial silicon during thermal oxidationJournal of Applied Physics, 1973
- Orientation dependence of the diffusion of boron in siliconSolid-State Electronics, 1971
- Anomalous diffusion in semiconductorsȁa quantitative analysisSolid-State Electronics, 1970
- The orientation dependent diffusion of boron in silicon under oxidizing conditionsSolid-State Electronics, 1969
- Correlation Factor of Impurity Diffusion in Diamond LatticePhysical Review B, 1969
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy PairPhysical Review B, 1967
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967