Formation of GaN Self-Organized Nanotips by Reactive Ion Etching
- 1 December 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (12A) , L1301
- https://doi.org/10.1143/jjap.40.l1301
Abstract
We describe a new method of forming self-organized GaN nanotips by reactive ion etching using chlorine plasma and its mechanism. Nanotips with a density of approximately 8×109 cm-2 have been formed after etching. The nanotips have diameters between 10 and 30 nm, a length of about 0.7 µm and a high aspect ratio. It is revealed that nanotip formation is attributed to a nanometer-scale mask with a high etch selectivity to GaN. The structure simulated using our formation mechanism is almost similar to the experimental nanotip structure. These results prove the validity of the formation mechanism by nanomasking effect of ionized SiO2 sputtered by Cl+ ions.Keywords
This publication has 9 references indexed in Scilit:
- Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam EpitaxyJapanese Journal of Applied Physics, 2001
- Self-Assembled GaN Quantum Dots Grown by Plasma-Assisted Molecular Beam EpitaxyJapanese Journal of Applied Physics, 2001
- Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 2000
- Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocationsApplied Physics Letters, 1998
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1995
- Metal semiconductor field effect transistor based on single crystal GaNApplied Physics Letters, 1993
- Observation of a two-dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN-AlxGa1−xN heterojunctionsApplied Physics Letters, 1992
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989