Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy
- 1 March 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (3A) , L192-194
- https://doi.org/10.1143/jjap.40.l192
Abstract
We report on the successful growth of free-standing GaN films on (0001) sapphire substrates by RF-molecular beam epitaxy. The key to obtain unstrained GaN layers is employing self-organized GaN nano-columns which involve an air gap structure as a footing layer of overgrown GaN. The residual strain in overgrown GaN films is evaluated by measuring the lattice constant by X-ray diffraction. It is found that the c-axis length of overgrown GaN is estimated to be 5.1848 Å, which is close to the value of strain-free GaN even with a layer thickness of 2.7 µm. Overgrown GaN peeled arbitrarily from GaN nano-columns is observed due to the cleaving process.Keywords
This publication has 14 references indexed in Scilit:
- Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch ScaleJapanese Journal of Applied Physics, 2000
- Structural characterization of GaN grown by hydrogen-assisted ECR-MBE using electron microscopyJournal of Crystal Growth, 2000
- Residual strain dependence of optical characteristics in GaN layers grown on (0001) sapphire substratesApplied Physics Letters, 1999
- Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1997
- Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN filmsApplied Physics Letters, 1996
- Thermal stress in GaN epitaxial layers grown on sapphire substratesJournal of Applied Physics, 1995
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- Growth of single crystal GaN substrate using hydride vapor phase epitaxyJournal of Crystal Growth, 1990
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire SubstratesJapanese Journal of Applied Physics, 1988
- Study of cracking mechanism in GaN/α-Al2O3 structureJournal of Applied Physics, 1985