Concentration dependent mobility of two-dimensional electron gas in GaAs/AlGaAs heterostructure
- 1 June 1991
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 6 (6) , 461-464
- https://doi.org/10.1088/0268-1242/6/6/008
Abstract
High-pressure freezeout of electrons onto metastable states of a Si donor, as well as the persistent photoconductivity method were used to tune the concentration of a two-dimensional electron gas n2DEG in a GaAs/AlGaAs heterostructure. This made the measurement of the temperature dependence of the 2DEG mobility possible in a wide range of n2DEG values, even though this was applied to only one sample. Consequently, it enabled the determination of various contributions to 2DEG mobility and in particular the separation of the acoustic phonon scattering from other scattering mechanisms. The above procedure leads to the determination of the deformation potential and points out its screening by free carriers. This screening is well described by the random phase approximation. The resulting conduction band deformation potential was found to be 12.5+or-0.05 eV.Keywords
This publication has 17 references indexed in Scilit:
- Investigation of Electron Mobility in a Two‐Dimensional Electron Gas. GaAs–AlxGa1−xAs Heterostructures, Application of the Hydrostatic Pressure MethodPhysica Status Solidi (b), 1990
- Metastable carrier concentration in GaAs/GaAlAs heterostructure under hydrostatic pressureJournal of Applied Physics, 1988
- Electron-energy-loss rates inAs/GaAs heterostructures at low temperaturesPhysical Review B, 1987
- Energy relaxation of two-dimensional electrons and the deformation potential constant in selectively doped AlGaAs/GaAs heterojunctionsApplied Physics Letters, 1986
- Low-temperature phonon-limited electron mobility in modulation-doped heterostructuresPhysical Review B, 1986
- Mobility transition in the two-dimensional electron gas in GaAsAlGaAs heterostructuresSolid State Communications, 1985
- Electron mobility in modulation-doped heterostructuresPhysical Review B, 1984
- Temperature dependence of the electron mobility in GaAs-GaAlAs heterostructuresApplied Physics Letters, 1984
- Transition temperature of anisotropic superconductors with kondo impuritiesSolid State Communications, 1984
- Electron Mobility in High-Purity GaAsJournal of Applied Physics, 1970