Investigation of Electron Mobility in a Two‐Dimensional Electron Gas. GaAs–AlxGa1−xAs Heterostructures, Application of the Hydrostatic Pressure Method

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Abstract
Hydrostatic pressure experiments are a very useful tool for 2D electron transport effect investigations as they allow the electronic properties of the heterojunction to be precisely modified without changing the intrinsic properties of the material. The hydrostatic pressure technique is applied in 2D gas mobility investigations in GaAlAs/GaAs heterojunctions in liquid helium temperature range. The experimental mobility versus 2D electron concentration and temperature dependences are compared with the theoretical predictions and it is shown that the mobility variations are generally described by the scattering by charged centers in the GaAlAs layer.