Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500–600 °C
- 15 May 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (10) , 7646-7651
- https://doi.org/10.1063/1.362428
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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