Interstitial chemisorption and interface formation of Pt on Si(111) observed by surface extended x-ray-absorption fine-structure and-edge x-ray-absorption resonance spectroscopies
- 15 November 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (10) , 7455-7458
- https://doi.org/10.1103/physrevb.34.7455
Abstract
The first structural description of the Pt/Si(111)7×7 interface formation at room temperature is derived from Pt -edge surface extended x-ray-absorption fine-structure spectroscopy and x-ray-absorption resonance spectroscopy. Pt chemisorbs in the top Si double-layer sixfold interstitial sites, introducing stress in the surface and subsurface. Above monolayer thicknesses Pt diffuses within the silicon substrate and, upon Pt enrichment of the intermixed phase, clusters with Si local coordination nucleate.
Keywords
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