Homogeneous chemical vapor deposition of amorphous semiconductor thin films
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 659-666
- https://doi.org/10.1016/0022-3093(83)90258-2
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The preparation of i n s i t u doped hydrogenated amorphous silicon by homogeneous chemical vapor depositionJournal of Applied Physics, 1983
- Efficient visible photoluminescence in the binary a-Si:Hx alloy systemApplied Physics Letters, 1983
- Electronic properties of doped glow-discharge amorphous germaniumSolar Energy Materials, 1982
- Hydrogenated amorphous silicon growth by CO2 laser photodissociation of silaneJournal of Applied Physics, 1982
- Shock-induced kinetics of the disilane decomposition and silylene reactions with trimethylsilane and butadieneOrganometallics, 1982
- Low defect density amorphous hydrogenated silicon prepared by homogeneous chemical vapor depositionApplied Physics Letters, 1982
- ESR and IR Studies on a-Si1-xGex:H Prepared by Glow Discharge DecompositionJapanese Journal of Applied Physics, 1981
- Kinetics and mechanism of amorphous hydrogenated silicon growth by homogeneous chemical vapor depositionApplied Physics Letters, 1981