Bias-dependent photoresponse of p+i n GaAs/AlAs/GaAs diodes
- 19 January 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (3) , 161-163
- https://doi.org/10.1063/1.97648
Abstract
We report photocollection efficiency measurements of p+in GaAs/AlAs/GaAs diodes fabricated on films grown by molecular beam epitaxy. Both the zero‐bias and bias‐dependent photocollection characteristics can be explained by assuming that the band discontinuity between AlAs and GaAs is mostly accommodated in the valence band.Keywords
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