Modulation-doped (Al,Ga)As/AlAs superlattice: Electron transfer into AlAs
- 1 August 1985
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3) , 284-286
- https://doi.org/10.1063/1.96193
Abstract
A modulation‐doped superlattice of n‐(Al,Ga)As and undoped AlAs has been grown by molecular beam epitaxy. At cryogenic temperatures, electrons transfer into the undoped AlAs layers and enhanced mobilities as high as 1000 cm2/Vs are observed for the first time. It is shown that by properly accounting for the depth of the donor level in modulation‐doped heterostructures reasonably good limits can be set on the gamma point conduction‐band discontinuity at the heterojunction. It is found that this discontinuity is approximately 60–65% of the band‐gap difference between the two alloys, in good agreement with other recent determinations.Keywords
This publication has 16 references indexed in Scilit:
- Negative charge, barrier heights, and the conduction-band discontinuity in AlxGa1−xAs capacitorsJournal of Applied Physics, 1985
- Effective masses of holes at GaAs-AlGaAs heterojunctionsPhysical Review B, 1985
- Comprehensive analysis of Si-doped (): Theory and experimentsPhysical Review B, 1984
- Summary Abstract: Direct observation of band mixing in GaAs–(AlxGa1−x)As quantum heterostructuresJournal of Vacuum Science & Technology B, 1984
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Parabolic quantum wells with thesystemPhysical Review B, 1984
- Electrical Properties of Si-Doped AlxGa1-xAs Layers Grown by MBEJapanese Journal of Applied Physics, 1982
- Two-dimensional electron gas m.e.s.f.e.t. structureElectronics Letters, 1980
- Coherence of injection phase-locked AlGaAs semiconductor laserElectronics Letters, 1980
- Current suppression induced by conduction-band discontinuity in Al0.35Ga0.65As-GaAs N-p heterojunction diodesJournal of Applied Physics, 1980