Electronic Structure and Optical Properties of Polycrystalline Cubic Semiconductors
- 1 February 1987
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 139 (2) , 457-466
- https://doi.org/10.1002/pssb.2221390213
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Optical properties and structure of free (substrateless) amorphous silicon foilsThin Solid Films, 1986
- Structural and Microstructural Determinations of Crystalline and Amorphous Fractions of Microcrystalline Ge: A ComparisonPublished by Springer Nature ,1985
- Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantationJournal of Applied Physics, 1984
- Effect of heavy doping on the optical properties and the band structure of siliconPhysical Review B, 1984
- Optical properties of disordered silicon in the range 1–10 eVSolar Energy Materials, 1982
- Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAsPhysical Review Letters, 1982
- Effects of quantitative disorder on the electronic structures of Si and GePhysical Review B, 1981
- Optical properties of low-pressure chemically vapor deposited silicon over the energy range 3.0–6.0 eVApplied Physics Letters, 1981
- Structure of the valence bands of zinc-blende-type semiconductorsPhysical Review B, 1975
- Simplified LCAO Method for the Periodic Potential ProblemPhysical Review B, 1954