Investigation of growth kinetics and mechanism of GaAs and (InGa)As thin films grown by a step-cooling technique of the liquid phase epitaxy
- 1 February 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 37 (2) , 101-106
- https://doi.org/10.1016/0022-0248(77)90069-0
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Some thermodynamic aspects of the growth of strained crystalsJournal of Crystal Growth, 1975
- Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniquesJournal of Crystal Growth, 1974
- Investigation of InxGa1−xAs films grown from thin solution layerCrystal Research and Technology, 1974
- Gallium arsenide dual Schottky barrier diodesSolid-State Electronics, 1973
- Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnetJournal of Crystal Growth, 1973
- A determination of the undercooling necessary to initiate the epitaxial growth of GaAs from solution in GaJournal of Crystal Growth, 1972
- Computer simulations of liquid phase epitaxy of GaAs in Ga solutionJournal of Crystal Growth, 1971
- On the nature of crystal growth from the meltJournal of Crystal Growth, 1967