Dopant-induced disordering of annealed AlGaAs heterostructures
- 13 July 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (2) , 165-167
- https://doi.org/10.1063/1.108206
Abstract
Impurity-induced layer disordering, i.e., outdiffusion of dopant and matrix elements, has been observed in superlattices and quantum wells. In this letter, we report on disordering in AlGaAs heterostructures in which only the central region of 650-Å-thick AlGaAs layers is Si doped. Disordering is clearly shown to be dependent on Si concentration and outdiffusion.Keywords
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