Compositional Disordering of Focused-Si-Implanted GaAs/AlGaAs Superlattices by Rapid Thermal Annealing
- 1 December 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (12A) , L2101-2103
- https://doi.org/10.1143/jjap.26.l2101
Abstract
Compositional disordering of focused-Si-implanted GaAs/Al0.5Ga0.5As superlattices, followed by rapid thermal annealing (RTA), was investigated by means of sputtering Auger electron spectroscopy (AES) and Raman spectroscopy. Complete disordering was found to take place in the superlattices focused-Si-implanted with a dose of 5×1015 cm-2 and annealed at 1000°C for 4 to 30 seconds, resulting in an Al0.25Ga0.75As alloy. The Raman spectra showed that this alloy had a higher quality as the implanted samples were annealed for longer periods of time.Keywords
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