Electrical Characteristics of Focused-Be-Implanted GaAs Activated by Rapid Thermal Annealing
- 1 April 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (4A) , L246
- https://doi.org/10.1143/jjap.26.l246
Abstract
The electrical behavior of focused Be-implanted GaAs followed by rapid thermal annealing (RTA) is investigated by means of Hall-effect measurements. Focused Be ion implantation is carried out at energies of 50 to 200 keV. The electrical activation is found to decrease with higher implantation energies. The electrical properties indicate that the radiation damage induced by focused ion beam (FIB) is more difficult to be annealed out as the implantation energy increases. This behavior is different from that of unfocused ion beam (UIB) implants, which shows no significant dependence on implantation energy.Keywords
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