Statistical Modeling With the PSP MOSFET Model
- 18 March 2010
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
- Vol. 29 (4) , 599-606
- https://doi.org/10.1109/tcad.2010.2042892
Abstract
PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies.Keywords
This publication has 15 references indexed in Scilit:
- Quadratic Backward Propagation of Variance for Nonlinear Statistical Circuit ModelingIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2009
- Mismatch Characterization of Ring OscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2007
- The Physical Background of JUNCAP2IEEE Transactions on Electron Devices, 2006
- Ring Oscillators for CMOS Process Tuning and Variability ControlIEEE Transactions on Semiconductor Manufacturing, 2006
- PSP: An advanced surface-potential-based MOSFET modelPublished by Springer Nature ,2006
- Monte Carlo modeling of threshold variation due to dopant fluctuationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Modeling and analysis of manufacturing variationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Direct sampling methodology for statistical analysis of scaled CMOS technologiesIEEE Transactions on Semiconductor Manufacturing, 1999
- Relating statistical MOSFET model parameter variabilities to IC manufacturing process fluctuations enabling realistic worst case designIEEE Transactions on Semiconductor Manufacturing, 1994
- Statistical modeling for efficient parametric yield estimation of MOS VLSI circuitsIEEE Transactions on Electron Devices, 1985