The Physical Background of JUNCAP2
- 21 August 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (9) , 2098-2107
- https://doi.org/10.1109/ted.2005.881004
Abstract
A new physics-based junction model for CMOS, called JUNCAP2, is presented. It contains new single-piece formulations for the Shockley-Read-Hall generation/recombination current and the trap-assisted tunneling (TAT) current, which are valid both in forward and reverse mode of operation. Moreover, the TAT model extends the existing model (IEEE Trans. Electron Devices, vol. 39, p. 2090, 1992) to the high electric fields encountered in today's CMOS technologies. Furthermore, the model contains expressions for junction capacitance, ideal current, band-to-band tunneling current, avalanche breakdown, and junction shot noise. The parameter extraction is also discussed in this paperKeywords
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