PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation
Top Cited Papers
- 21 August 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 53 (9) , 1979-1993
- https://doi.org/10.1109/ted.2005.881006
Abstract
This paper describes the latest and most advanced surface-potential-based model jointly developed by The Pennsylvania State University and Philips. Specific topics include model structure, mobility and velocity saturation description, further development and verification of symmetric linearization method, recent advances in the computational techniques for the surface potential, modeling of gate tunneling current, inclusion of the retrograde impurity profile, and noise sources. The emphasis of this paper is on incorporating the recent advances in MOS device physics and modeling within the compact modeling contextKeywords
This publication has 63 references indexed in Scilit:
- New compact model for induced gate current noise [MOSFET]Published by Institute of Electrical and Electronics Engineers (IEEE) ,2004
- Impact of gate direct tunneling current on circuit performance: a simulation studyIEEE Transactions on Electron Devices, 2001
- A charge sheet capacitance model of short channel MOSFETs for SPICEIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1991
- A physics-based MOSFET noise model for circuit simulatorsIEEE Transactions on Electron Devices, 1990
- A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistorsIEEE Transactions on Electron Devices, 1990
- Thickness limitations of SiO/sub 2/ gate dielectrics for MOS ULSIIEEE Transactions on Electron Devices, 1990
- Subbreakdown drain leakage current in MOSFETIEEE Electron Device Letters, 1987
- A charge-sheet model of the MOSFETSolid-State Electronics, 1978
- Tunneling in a finite superlatticeApplied Physics Letters, 1973
- Zener tunneling in semiconductorsJournal of Physics and Chemistry of Solids, 1960