Determination of bulk diffusion length in thin semiconductor layers by SEM-EBIC
- 14 December 1981
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 14 (12) , 2269-2274
- https://doi.org/10.1088/0022-3727/14/12/016
Abstract
The SEM-EBIC current through a Schottky diode, with the junction plane parallel to the surface of a thin semiconductor layer, is calculated when the electron beam of the SEM is line-scanned across the surface. It is shown that the bulk diffusion length of minority carriers can be accurately determined from the dependence of EBIC decay on layer thickness. This method is applied to n-type LPE GaP.Keywords
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