A 100-W high-gain A1GaNIGaN HEMT power amplifier on a conductive N-SiC substrate for wireless base station applications
- 19 April 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated on a low-cost conductive n-SiC substrate. A single-chip GaN HEMT amplifier, operating at 60 V, achieved high CW output power of (101 W), a high linear gain (155 dB) and 50 % power-added efficiency at 2.14 GHz. This is the first report about the greater than 100 W power performance of the single-chip GaN HEMT that was grown on a conductive substrate.Keywords
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