GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates
- 31 January 2004
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 48 (1) , 193-196
- https://doi.org/10.1016/s0038-1101(03)00290-9
Abstract
No abstract availableFunding Information
- Office of Naval Research
- Ministry of Education (89-E-FA06-1-4)
- National Aeronautics and Space Administration
- Muscular Dystrophy Association
- University of Florida
- Small Business Technology Transfer (N0014-02-M-0287)
- National Science Foundation (CTS-0301178)
- National Science Council (NSC-89-2215-E-008-031)
This publication has 13 references indexed in Scilit:
- Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistorsSolid-State Electronics, 2003
- Wide and narrow bandgap semiconductors for power electronics: A new valuationJournal of Electronic Materials, 2003
- Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistorsJournal of Electronic Materials, 2003
- Long-term thermal stability of Ti/Al/Mo/Au ohmic contacts on n-GaNJournal of Electronic Materials, 2003
- AlGaN/GaN HEMTs-an overview of device operation and applicationsProceedings of the IEEE, 2002
- Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistorsApplied Physics Letters, 2002
- AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noiseIEEE Transactions on Electron Devices, 2001
- Trapping effects and microwave power performance in AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- Microwave noise performance of AlGaN/GaN HEMTsElectronics Letters, 2000
- GaN based transistors for high power applicationsSolid-State Electronics, 1998