Hydride vapor phase epitaxy-grown AlGaN/GaN high electron mobility transistors
- 30 June 2003
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 47 (6) , 1075-1079
- https://doi.org/10.1016/s0038-1101(02)00473-2
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- AlGaN/GaN HEMTs-an overview of device operation and applicationsProceedings of the IEEE, 2002
- Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTsIEEE Electron Device Letters, 2002
- Impact of wide bandgap microwave devices on DoD systemsProceedings of the IEEE, 2002
- Performance of AlGaN/GaN High Electron Mobility Transistors at Nanoscale Gate LengthsJournal of Nanoscience and Nanotechnology, 2002
- Comparison of Surface Passivation Films for Reduction of Current Collapse in AlGaN/GaN High Electron Mobility TransistorsJournal of the Electrochemical Society, 2002
- Properties of Freestanding GaN Substrates Grown by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 2001
- Free-Standing GaN Substrates by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 2000
- Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch ScaleJapanese Journal of Applied Physics, 2000
- Fabrication of freestanding GaN by HVPE and optically pumped stimulated emission at room temperatureSemiconductor Science and Technology, 1999
- Growth of gallium nitride by hydride vapor-phase epitaxyJournal of Crystal Growth, 1997