Process-induced strains in dry etched semiconductor nanostructures studied by photoreflectance
- 15 June 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (12) , 6481-6484
- https://doi.org/10.1063/1.359123
Abstract
This article reports a photoreflectance study of the process‐induced strains in both dry etched CdTe/Cd0.875Mn0.125Te and GaAs/Al0.3Ga0.7As nanostructures patterned by electron beam lithography. The results show that compressive strains can be introduced in both the dry etched nanostructures and the layers underneath the etched surfaces due to the introduction of defect complexes and/or crystographic damage inflicted in the fabrication process. The effect of post dry etch thermal annealing on the strains in the dry etched nanostructures has also been studied.This publication has 10 references indexed in Scilit:
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