The analyses of an SiF4 plasma in an R.F. glow discharge for preparing fluorinated amorphous silicon thin films
- 1 November 1983
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 109 (1) , 47-57
- https://doi.org/10.1016/0040-6090(83)90030-5
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Plasma spectroscopy—Glow discharge deposition of hydrogenated amorphous siliconThin Solid Films, 1982
- Analysis of chemical processes of plasma etchingThin Solid Films, 1981
- Behavior of Fluorine Atoms in a-Si:F:H Alloy Investigated by Gas Evolution and Infrared AbsorptionJapanese Journal of Applied Physics, 1981
- Novel effects of magnetic field on the silane glow dischargeApplied Physics Letters, 1980
- Silane dissociation mechanisms and thin film formation in a low pressure multipole dc dischargeApplied Physics Letters, 1980
- Ionic species in a silane plasmaApplied Physics Letters, 1980
- Modifications in optoelectronic behavior of plasma-deposited amorphous semiconductor alloys via impurity incorporationJournal of Non-Crystalline Solids, 1980
- Plasma spectroscopy control and analysis of a-Si:H depositionJournal of Non-Crystalline Solids, 1980
- Influence of the plasma parameters on the properties of a-Si films prepared by glow-discharge deposition methodJournal of Non-Crystalline Solids, 1980
- A new amorphous silicon-based alloy for electronic applicationsNature, 1978