The influence of the reactive gas flow on the properties of AIN sputter-deposited films
- 7 July 1991
- journal article
- Published by Elsevier in Materials Science and Engineering: A
- Vol. 140, 696-701
- https://doi.org/10.1016/0921-5093(91)90499-d
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Sputtered AIN films for semiconductor lasersThin Solid Films, 1990
- Low-Temperature Growth of Polycrystalline AlN Films by Microwave Plasma CVDJapanese Journal of Applied Physics, 1990
- Modifications by rare gas bombardment of aluminium nitride formed by direct implantationMaterials Science and Engineering: B, 1989
- Preparation and Properties of Aluminum Nitride Films Using an Organometallic PrecursorJournal of the Electrochemical Society, 1989
- Defect structure and superconducting transition temperature of ion-irradiated refractory metal carbides and nitridesNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Summary Abstract: Characterization of AlN films produced by chemical vapor deposition using a novel metal azide precursorJournal of Vacuum Science & Technology A, 1988
- Corrosion-resistant protective overcoat for magnetooptical mediaIEEE Transactions on Magnetics, 1986
- Reactively rf magnetron sputtered AlN films as gate dielectricJournal of Applied Physics, 1983
- The dependence of aluminum nitride film crystallography on sputtering plasma compositionJournal of Vacuum Science & Technology A, 1983
- Formation of Al-nitride films at room temperature by nitrogen ion implantation into aluminumJournal of Applied Physics, 1981