c-Si (n +)/a-Si Alloy/Pd Schottky Barrier Device for the Effective Evaluation of Photovoltaic Performance of a-Si Alloy Materials
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Stability Studies of Hydrogenated Amorphous Silicon Alloy Solar Cells Prepared with Hydrogen DilutionMRS Proceedings, 1994
- Comments on the steady state photocarrier grating technique to measure diffusion lengthsJournal of Applied Physics, 1992
- Effect of light-induced defects on the short wavelength quantum efficiencies of amorphous silicon solar cell structuresJournal of Applied Physics, 1988
- Physics of amorphous silicon alloy p-i-n solar cellsJournal of Applied Physics, 1985
- Minority-carrier diffusion lengths in amorphous silicon-based alloysJournal of Applied Physics, 1982
- Barrier height modification in heat-treated aluminium Schottky diodes on hydrogenated amorphous siliconSolar Cells, 1981
- Metal-insulator-semiconductor solar cells using amorphous Si:F:H alloysApplied Physics Letters, 1980
- Internal photoemission in hydrogenated amorphous-Si filmsApplied Physics Letters, 1980
- Schottky-barrier characteristics of metal–amorphous-silicon diodesApplied Physics Letters, 1976